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利用微波等离子体化学气相沉积(CVD)方法,在(100)P型Si衬底上沉积得到{110}织构金刚石膜样品,并对其作退火处理。拉曼光谱和高角度X射线衍射(XRD)线型测试结果表明:{110}织构金刚石膜由于晶粒排布的有序程度提高,本征张应力较小,样品内残余应力与其热应力状态一样,均表现为压应力,且随膜的增厚,残余压应力绝对值变大,呈现随厚度的梯度分布;400℃退火3h后,膜内残余应力状态发生改变,说明退火处理可以有效调整膜内残余应力。
A sample of {110} textured diamond film was deposited on (100) P type Si substrate by microwave plasma chemical vapor deposition (CVD) method and annealed. Raman spectroscopy and high-angle X-ray diffraction (XRD) linear test results show that: {110} textured diamond films due to the order of the grain arrangement increases, the intrinsic tensile stress is small, the residual stress in the sample and its thermal stress With the thickening of the film, the absolute value of residual compressive stress becomes larger, showing a gradient distribution with thickness; residual stress state changes after annealing at 400 ℃ for 3h, indicating that the annealing treatment can be effective Adjust the residual stress in the membrane.