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利用分子束外延技术，生长了极低阈值电流密度、低内损耗、高量子效率的InGaAs／GaAs／AlGaAs应变量子阱激光器．在腔长900μm时，80μm宽接触激光器阈值电流密度是125A／cm2，在腔长为2000μm时是113A／cm2，这样低的阈值电流密度是目前国内报道的最低值．激光器的内损耗和内量子效率分别是2cm－1和84％．
Using molecular beam epitaxy, InGaAs / GaAs / AlGaAs strained quantum well lasers with very low threshold current density, low internal loss and high quantum efficiency were grown. The threshold current density of 80μm wide contact laser is 125A / cm2 when the cavity length is 900μm, and 113A / cm2 when the cavity length is 2000μm. Thus, the low threshold current density is the lowest reported at home. Laser internal loss and internal quantum efficiency are 2cm-1 and 84% respectively.