一、引言离子注入后退火的控制气氛技术(CAT 或非密封)提供一种有用的方法,可以激活注入的离子和降低离子注入引起的晶格损伤。该方法的目的是提供适当的气氛,维持 GaAs表面的稳定,防止镓和砷的损失并且不会沾污 GaAs。CAT 退火避免了由于介质诸如 SiO_2和Si_3N_4的密封(CAP)所导致的应力和杂质的复杂性。这些介质可能吸附了某些有意附加的掺杂剂。已经发展了许多 CAT 的改进方法。在这些方法中,利用平衡提供保护性气氛, I. INTRODUCTION The controlled atmosphere technique (CAT or unsealed) that anneals after ion implantation provides a useful way to activate implanted ions and reduce lattice damage caused by ion implantation. The purpose of this method is to provide a suitable atmosphere that maintains the stability of the GaAs surface, prevents the loss of gallium and arsenic and does not contaminate GaAs. CAT annealing avoids the complexity of stress and impurities due to the sealing of the media such as SiO 2 and Si 3 N 4 (CAP). These media may adsorb some of the intentional additional dopants. Many improvements to CAT have been developed. In these methods, balance is used to provide a protective atmosphere,