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利用射频溅射方法制备了非晶态Hg_(1-x)Cd_xTe薄膜(x=0,0.22,0.50,0.66,1),在80 K~300 K温度范围内,研究了Cd组分x对暗电导的影响。当温度T>210 K时,随着Cd组分增加,暗电导减小;当温度T<210 K,随着Cd组分增加,则暗电导增大;当温度T=210 K时,暗电导几乎与Cd组分无关。这可能是由于随着Cd组分增加,薄膜中的缺陷增加所致。a-Hg_(1-x)Cd_xTe(x=0、0.22、0.50、0.66和1)薄膜中存在扩展态电导和局域态电导,Cd组分x越大,两种导电机制的转变温度Tm也越高。在T=300 K时,利用暗电导的激活能估算出了非晶态Hg_(1-x)Cd_xTe薄膜的迁移率隙Eg,随着Cd组分x增加,迁移率隙Eg微弱减小。
The amorphous Hg_ (1-x) Cd_xTe films (x = 0,0.22,0.50,0.66,1) were prepared by radio frequency sputtering and the effects of Cd on the darkness The effect of conductance. The dark conductance decreases with the increase of Cd concentration when the temperature is higher than 210 K. When the temperature is lower than 210 K, the dark conductance increases with the increase of Cd concentration. When T = 210 K, dark conductance Almost nothing to do with Cd components. This may be due to the increased defects in the film as the Cd component increases. In the films of a-Hg_ (1-x) Cd_xTe (x = 0,0.22,0.50,0.66 and 1), the extended state conductance and the local state conductance are present. The larger the Cd content x, the transition temperature Tm The higher. At T = 300 K, the mobility gap Eg of the amorphous Hg_ (1-x) Cd_xTe thin film is estimated by using the dark conductance energy. As the Cd content x increases, the mobility gap Eg decreases slightly.