单晶生长用AlN粉料的烧结提纯工艺实验研究

来源 :半导体光电 | 被引量 : 0次 | 上传用户:aiyi23_2008
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使用自主研发的钨系统中频感应加热炉对AlN粉料进行了烧结提纯处理实验,并用XRD、SEM、IGA和GDMS等表征方法分析了烧结后的样品。实验发现,高温(2 250℃)长时间(50h)烧结提纯工艺效果显著,但AlN粉料损耗高达47.37%;而低温(小于2 000℃)分段式短时间(每段10h)烧结提纯工艺粉料损耗低于2%,但是提纯效果一般。通过对实验结果的综合分析,提出了一种AlN粉料烧结提纯的改进工艺,最终得到了氧含量仅238ppm、碳含量135ppm的高质量AlN单晶生长原料,并且显著增加了原料的利用率。 Sintering and purification experiments of AlN powder were carried out by using the self-developed tungsten system medium frequency induction heating furnace. The sintered samples were analyzed by XRD, SEM, IGA and GDMS. The experimental results showed that the sintering process at 50 ℃ for 2h and 250h was significant, but the loss of AlN powder was as high as 47.37%. The sintering process of short-time (less than 2 000 ℃) Powder loss less than 2%, but the purification effect in general. Based on the comprehensive analysis of the experimental results, an improved AlN powder sintering purification process was proposed. Finally, a high quality AlN single crystal growth material with an oxygen content of only 238ppm and a carbon content of 135ppm was obtained, and the utilization of raw materials was significantly increased.
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