论文部分内容阅读
随着器件尺寸缩小,浅结、超浅结的制作日益成为重要的工艺模块。对于22nm及以下技术代来说,除了采用低能离子注入获得极浅的原始注入分布外,通常还采用短时或者瞬时激光退火来激活注入杂质,以保持原始的注入杂质不发生明显的扩散再分布。详细介绍了一台激光退火设备的搭建情况,利用所搭建的激光退火装置进行浅结、超浅结的激光退火实验研究。另一方面,鉴于当前激光退火工艺模型的欠缺,在实验数据的基础上,初步分析和建立了专门针对浅结激光退火处理的工艺模型。
As device sizes shrink, shallow junctions, the production of ultra-shallow junctions is increasingly becoming an important process module. For 22nm and below generations, in addition to using extremely low-energy ion implantation to achieve a very shallow initial implant profile, short-term or transient laser annealing is often used to activate implanted impurities to keep the original implanted impurities from appreciable diffusion redistribution . The construction of a laser annealing equipment is introduced in detail, and the laser annealing experiment of shallow and ultra-shallow junctions is carried out by using the laser annealing device. On the other hand, in view of the lack of the current laser annealing process model, based on the experimental data, a preliminary analysis and establishment of a process model specifically for the shallow junction laser annealing process.