Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO_2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescence(PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanocrystals was discussed. Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si / SiO 2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were. The photoluminescence (PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanocrystals was discussed.