本文报道,通过重复腐蚀研究<111>和<100>两种晶向外延硅中层错的退火现象,发现退火后层错的消除并不都是从外延层表面开始的,往往也会发生在外延层中部的面角位错处或层错起源处.透射电镜观察分析表明,不易退火消除的稳定层错是本征型的. In this paper, we report that the annealing of the intermediate layer <111> and <100> in the epitaxial layers of silicon by repeated etching studies shows that not all of the layer faults disappear from the surface of the epitaxial layer after annealing but often occur in the epitaxial layer The surface angular dislocations or the origin of faults in the middle of the layer were observed by TEM.The results show that the stable faults which are hard to be eliminated by annealing are of the intrinsic type.