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Si C半超结垂直双扩散金属氧化物半导体场效应管(VDMOSFET)相对于常规VDMOSFET在相同导通电阻下具有更大击穿电压.在N型外延层上进行离子注入形成半超结结构中的P柱是制造Si C半超结VDMOSFET的关键工艺.本文通过二维数值仿真研究了离子注入导致的电荷失配对4H-Si C超结和半超结VDMOSFET击穿电压的影响,在电荷失配程度为30%时出现半超结VDMOSFET的最大击穿电压.在本文的器件参数下,P柱浓度偏差导致击穿电压降低15%时,半超结VDMOSFET柱区浓度偏差范围相对于超结VDMOSFET可提高69.5%,这意味着半超结VDMOSFET对柱区离子注入的控制要求更低,工艺制造难度更低.
The Si C semi-super-junction vertical double-diffused metal oxide semiconductor field effect transistor (VDMOSFET) has a larger breakdown voltage at the same on-resistance compared to a conventional VDMOSFET. Ion implantation is performed on the N type epitaxial layer to form a semi-super junction structure P column is the key technology to fabricate Si C semi-super-junction VDMOSFET.This paper studies the effect of charge mismatch on the breakdown voltage of 4H-Si C super-junction and semi-super-junction VDMOSFET by two-dimensional numerical simulation. The maximum breakdown voltage of the semi-super-junction VDMOSFET is found at the 30% level.With the device parameters of this paper, when the breakdown voltage drops 15% VDMOSFET can be increased by 69.5%, which means semi-super-junction VDMOSFET lower requirements for the control of column ion implantation, process manufacturing more difficult.