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The self-interstitial atoms in silicon generated by the bulk surface oxidation diffuse into the bulk inside and affect the phenomena such as the diffusions and the stacking faults.The generation rate of self-interstitials(R_(gen)) depends on theωpower of the oxidation film growth rate dX_0/dt.The physical quantityωis important to understand the material science relevant to self-interstitials in the silicon crystal.However,the conclusiveωvalue is not reported,although variousωvalues to control the generation rate have been used.In the present study,the chemical reaction equation is analytically solved,and using the result,the oxidation stacking fault radius(r) is analytically expressed against the oxidation time(t).Comparing the obtained relation of r=r(t) with the experimental results of the stacking faults,the analytical expression of co is determined and the physical meaning ofωis clarified.Furthermore,the temperature dependence ofωis also numerically determined.
The self-interstitial atoms in silicon generated by the bulk surface oxidation diffuse into the bulk inside and affect the phenomena such as the diffusions and the stacking faults. The generation rate of self-interstitials (R_ (gen)) depends on the ωpower of the oxidation film growth rate dX_0 / dt. The physical quantityωis important to understand the material science ωω important to understand the material quantityωis important to understand the material science ωω important to self-interstitials in the silicon crystal. However, the conclusiveωvalue is not reported, although various ωvalues to control the generation rate have been used. the chemical reaction equation is analytically solved, and using the result, the oxidation stacking fault radius (r) is analytically expressed against the oxidation time (t). faults, the analytical expression of co is determined and the physical meaning ofωis clarified .Furthermore, the temperature dependence ofωis also numerically determined.