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在自加热效应下,对有、无AlGaInN电子阻挡层的两种发光二极管芯片进行了数值研究系统分析了芯片能带结构,载流子输运与分布特性,内部焦耳热和复合热特性,内量子效率衰落的物理机制,并讨论了不同俄偈复合系数在自加热效应下对效率衰落效应的影响.模拟结果表明:当在p-GaN层与活性层间插入AlGaInN电子阻挡层后,效率衰落效应得到显著改善,芯片结温明显升高.俄偈复合热不是内热源的主要贡献,可忽略不计.效率衰落效应受芯片结温影响不大,电子漏电流与俄偈复合是效率衰落的主要原因.
Under the self-heating effect, two kinds of light-emitting diode chips with and without AlGaInN electron blocking layer were numerically investigated. The band structure, carrier transport and distribution, internal Joule heat and composite thermal characteristics were systematically analyzed. And the effects of the different complex coefficients on the efficiency of self-heating are discussed.The simulation results show that when the AlGaInN electron blocking layer is inserted between the p-GaN layer and the active layer, the efficiency declines Effect is significantly improved, the chip junction temperature was significantly increased.Russian compound heat is not the main contribution of the internal heat source, negligible efficiency decline effect is not affected by the chip junction temperature, the electronic leakage current and the Russian compound is the main decline in efficiency the reason.