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本文在LC—1离子注入机的实验条件下(30SS～80Kev),测量了B~+沿紊乱方向入射单晶靶的平均投影射程RP和标准偏差(?)RP的实验值,并通过对LSS理论和测量数据的分析,提出了借用厄尔文“硅中P型高斯分布扩散层的平均电导”曲线,求Si中B~+注入层的载流子分布的方法。实验结果表明:其近似程度比LSS理论高,而且方法简单;既便于选择注入条件,又便于器件工艺分析。
In this paper, we measured the average projection distance RP and the standard deviation RP of incident single crystal targets B ~ + along the disordered direction under the experimental conditions of LC-1 ion implanter (30SS ~ 80Kev) Theory and measurement data, a method of calculating the carrier distribution of B ~ + implanted layer in Si is put forward by borrowing the “average conductance” curve of P-type Gaussian distributed diffusion layer in Silicon. The experimental results show that the approximation degree is higher than that of LSS, and the method is simple. It is easy to select the injection conditions and facilitates the process analysis of the devices.