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本文计算了(Cd、Hg)Te光电二极管的单位面积电压灵敏度,即乘积R_VA及探测率D~*。假设:来自n区的空穴扩散电流超过穿越p—n结总电流中的其他组分,而它的寿命则由俄歇机构决定,就可以预言在宽波段工作的红外辐射光电二极管接收器的极限参数。探讨了(Cd、Hg)Te外延层及以其为基底的光电二极管的制备工艺,提出了预防p—n结表面电流和表面击穿的新方法,该方法较之一般的工艺能获得高的稳定性。对1—11微米波段的非致冷光电二极管的理论值和实验值进行了比较,发现对2.5—7微米波段的探测器来说是非常吻合的。在λ>2.5和λ>7微米的波段,实验值明显低于计算值,并对可能的原因进行了研究。
In this paper, the voltage sensitivity per unit area of (Cd, Hg) Te photodiode is calculated, which is product R_VA and detection rate D ~ *. Assuming that the hole diffusion current from region n exceeds that of the other components of the total current through the p-n junction and its lifetime is determined by the Auger facility, it can be predicted that a wide range of infrared radiation photodiode receivers Limit parameters. The preparation process of (Cd, Hg) Te epitaxial layer and its base photodiode are discussed. A new method to prevent the surface current and surface breakdown of p-n junction is proposed. Compared with the general process, the method can obtain high stability. The theoretical and experimental values of uncooled photodiodes in the 1-11 micron band are compared and found to be very good for detectors in the 2.5-7 micron band. In the range of λ> 2.5 and λ> 7 μm, the experimental values were significantly lower than the calculated values, and the possible causes were studied.