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较系统地研究了不同衬底材料对制备立方氮化硼薄膜的影响 .用热丝增强射频等离子体CVD法 ,以NH3,B2 H6和H2 为反应气体 ,在Si,Ni,Co和不锈钢等衬底材料上 ,成功生长出高质量的立方氮化硼薄膜 .还用13 5 6MHz的射频溅射系统将c BN薄膜沉积在Si衬底上 ,靶材为h BN(纯度 99 99% ) ,溅射气体为氩气和氮气的混合气体 ,所得到的氮化硼薄膜中立方相含量高于 90 % .用X射线衍射谱和傅里叶变换红外谱对样品进行的分析表明 ,衬底材料与c BN的晶格匹配情况 ,对于CVD生长立方氮化硼薄膜影响很大 ,而对溅射生长立方氮化硼薄膜影响不大 .
The effects of different substrate materials on the preparation of cubic boron nitride thin films were investigated systematically.The effects of different substrate materials on the fabrication of cubic boron nitride thin films were investigated by using hot wire enhanced radio frequency plasma CVD, NH3, B2H6 and H2 as reactant gases, Si, Ni, Co and stainless steel A cubic boron nitride thin film was successfully grown on the bottom material and a cBN thin film was also deposited on the Si substrate using a 13 5 6 MHz radio frequency sputtering system with h BN (99 99% purity) spatter The gas is a mixed gas of argon and nitrogen, and the content of the cubic phase in the obtained boron nitride thin film is higher than 90%. The analysis of the sample by X-ray diffraction and Fourier transform infrared spectroscopy shows that the material of the substrate and The lattice matching of c BN has a great influence on the growth of cubic boron nitride films by CVD and little influence on the growth of cubic boron nitride films by sputtering.