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本文研究了局部定向异质外延生长的金刚石膜的压阻效应，实验研究表明，这种膜的压阻因子在200微应变，室温下约为1300．其值大大超过了单晶硅的相应值，这是因为外延膜中缺陷态降低并且改进了测试方法，文中还简单讨论了金刚石膜压阻效应的起因．
In this paper, the piezoresistive effect of diamond films grown by local directional alloying is studied. Experimental studies show that the piezoresistive factors of this film are about 200 at 200 microstrain and about 1300 at room temperature. Its value greatly exceeds the corresponding value of single crystal silicon, which is because the defect state of the epitaxial film is reduced and the testing method is improved. The reason of the piezoresistive effect of the diamond film is also briefly discussed in the article.