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通常,我们把内光电器件称为固态光子器件,这类器件的工作是基于半导体材料的内光电效应。在入射辐射的作用下,电子能态发生变化,但不向物质界面外发射电子。根据光电导效应可以研制出光电导探测器;利用光生伏特效应可以研制出光伏探测器(或结型光子器件);而以光电磁效应为原理研制的探测器称为光电磁探测器。固态光子器件有不少用途,一般工作在3—5微米和8—14微米的红外波段,但根据实际需要选用适当的半导体材料,从原理上说,有可能使探测器在直到1000微米的宽广波段上工作。热探测器虽然也可以用于探测这些波段的红外辐射,但其灵敏度和响应时间等方面的性能一般不如光子器件好。
In general, we refer to internal optoelectronic devices as solid-state photonics. The work of such devices is based on the internal opto-electronic effect of semiconductor materials. Under the action of incident radiation, the electronic energy state changes, but does not emit electrons to the material interface. According to the photoconductive effect, a photoconductive detector can be developed; a photovoltaic detector (or a junction photonic device) can be developed by using the photo-voltaic effect; and a detector developed based on the principle of photo-electromagnetic effect is called a photoelectromagnetic detector. Solid-state photonic devices have many uses, the general work in the 3-5 micron and 8-14 micron infrared band, but according to the actual need to use the appropriate semiconductor materials, in principle, it is possible to make the detector up to 1000 microns wide Band work. Although heat detectors can also be used to detect the infrared radiation in these bands, their performance in terms of sensitivity and response time is generally not as good as that of photonic devices.