在深低温强磁场条件下,对不同电学参数(掺杂量,补偿度等)的N-InSb材料的过热电子输运特性进行了系统研究,结果表明:高补偿材料能在较高电场区呈现出很强的非线性电导,对此,我们采用了二带导电模型进行了分析和讨论,提出了利用高补偿低浓度N-InSb材料来改善锑化铟远红外探测器性能的新方法,从而为锑化铟过热电子远红外探测器的选材提供了可靠依据. Under deep cryogenic conditions, the superheat electron transport properties of N-InSb materials with different electrical parameters (doping amount, compensation degree, etc.) have been systematically studied. The results show that the high compensating material can appear in the higher electric field A very strong nonlinear conductance is obtained. For this purpose, we use the two-conductor model to analyze and discuss the new method of improving the performance of InSb far infrared detectors by using high-compensating low-concentration N-InSb materials It provides a reliable basis for the selection of indium antimonide overheated electronic far-infrared detector.