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碳是硅中与氧密切相关的重要杂质,现在氧已成为影响器件性能及成品率的关键因素,碳的重要性也日益明显。然而,目前对碳的了解却远不如氧。本文将叙述硅中碳的来源与分布(包括轴向与径方分布、碳条纹及碳沉淀等),碳对材料性能(如NTD硅的退火行为、热施主形成、硅中金扩散、原生单晶中微缺陷等),器件性能(包括功率器件、低压器件及集成电路)的影响等。最后叙述碳与氧沉淀的关系。
Carbon is an important oxygen-dependent impurity in silicon. Now that oxygen has become a key factor in device performance and yield, the importance of carbon is becoming increasingly apparent. However, the current understanding of carbon is far less than oxygen. This article will describe the source and distribution of carbon in silicon (including axial and radial distribution, carbon stripes and carbon deposition, etc.), carbon properties of the material (such as NTD silicon annealing behavior, thermal donor formation, diffusion of silicon gold, Crystal defects, etc.), device performance (including power devices, low-voltage devices and integrated circuits) and so on. Finally, the relationship between carbon and oxygen precipitation is described.