Mott曾利用Mos结构对无序系统进行了研究,后来先后有作者对a-Si进行场效应研究,其测量量是表面电导,所用样品的结构比较复杂,对工艺要求也比较苛刻.本文作者根据a-Si在外电场作用下的电容效应,选择电容作为测量量,并称之为电场效应.测量样品的典型形式为M-a-Si-c-Si结构. Mott has used the Mos structure to study the disorder system, and later one of them has carried out a field effect study on a-Si, the measurement is the surface conductance, the structure of the sample used is more complex, and the process requirements are relatively harsh.According to the author The capacitance effect of a-Si under the external electric field is chosen as the measured quantity and called the electric field effect.The typical form of the measured sample is the Ma-Si-c-Si structure.