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研究了各种烧结温度下ZnO-Bi_2O_3-MnO和ZnO-Bi_2O_3-MnO-TiO_2系统的微观结构,晶粒尺寸分布与I-V特性的关系,根据其晶粒分布的结果,证明计算势垒电压与测量值存在差异。采用直接和间接的方法比较了两个系统的测量势垒电压,表明它们都是烧结温度和平均晶粒尺寸标准差的函数。在任何烧结温度,从直接的方法获得的测量势垫电压分别为:含TiO_2系统是5V(在10μA下);不含TiO_2系统是6V(在4μA下)。统计分析指出,对于计算变阻器晶粒边界结的势垒数,采用一般的方法足以改善势垒电压的差异。
The relationship between the microstructure, grain size distribution and IV characteristics of ZnO-Bi_2O_3-MnO and ZnO-Bi_2O_3-MnO-TiO_2 systems at various sintering temperatures was studied. Based on the results of their grain size distribution, There are differences in values. The measured barrier voltages of the two systems were compared using direct and indirect methods, indicating that they are all a function of the standard deviation of the sintering temperature and the average grain size. The measured potential pad voltages obtained from the direct method at any sintering temperature are respectively: 5 V for the TiO 2 -containing system (at 10 μA) and 6 V for the TiO 2 -containing system (at 4 μA). Statistical analysis shows that for the calculation of the barrier number of varistor grain boundary junctions, the general method is sufficient to improve the barrier voltage difference.