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本文指出高能磷离子对多晶硅异常深的穿透导致在MOS器件中产生高浓度空穴陷阱。在某些情况下,离子注入产生的缺陷不能根据照射前的特性进行检测。业已证实,在甚高剂量范围内,空穴陷阱的浓度与注入剂量密切相关;并确定了离子能量和多晶硅厚度的影响。这些观测值和结果可直接用来阐明辐射加固MOS工艺规程。
This paper indicates that the abnormally high penetration of high-energy phosphorus ions into polycrystalline silicon leads to high concentrations of hole traps in MOS devices. In some cases, defects caused by ion implantation can not be detected according to the characteristics before irradiation. It has been demonstrated that at very high doses, the concentration of hole traps is closely related to the implant dose; and the effect of ion energy and polysilicon thickness is established. These observations and results can be used directly to elucidate the radiation-enhanced MOS process protocol.