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对比研究了SiO2、聚酰亚胺薄膜、SiNx/旋涂玻璃(SOG)复合材料等钝化材料对倒装焊深紫外LED器件抑制漏电流恶化、改善器件可靠性的作用。实际测试结果表明,未钝化和采用SiO2、聚酰亚胺、SiNx/SOG复合钝化膜后,倒装焊紫外LED短路漏电比例分别为100%、100%、55%和18%,采用聚酰亚胺和SiNx/SOG复合钝化膜的器件点亮1 000h后光衰分别为67%和20%。分析表明,SiNx与SOG结合使用有效降低了表面电荷复合几率并改善了倒装焊短路问题;SOG还进一步降低了表面的粗糙度,改善了由于AlGaN外延表面上的深凹槽结构引起的器件漏电及倒装焊金属溢流的短路,从而大大提高了可靠性。
The effects of passivation materials such as SiO2, polyimide film and SiNx / spin on glass (SOG) composite on the suppression of the leakage current and the improvement of device reliability were investigated. The actual test results show that the short-circuit leakage ratio of flip-chip UV LED is 100%, 100%, 55% and 18% respectively after unpassivated and using SiO2, polyimide and SiNx / SOG composite passivation film. Immers and SiNx / SOG composite passivation film devices lit after 1000h light fades were 67% and 20%. The results show that the combination of SiNx and SOG can effectively reduce the surface charge recombination probability and improve the flip-chip short circuit problem. The SOG further reduces the surface roughness and improves the device leakage caused by the deep groove structure on the epitaxial surface of AlGaN And flip-chip metal overflow of the short circuit, thereby greatly improving the reliability.