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对基于 Ga As/ Al Ga As系子带间吸收的一种新型量子阱红外探测器 ,采用 Poisson方程和 Schrodinger方程 ,计算了新器件结构的能带结构、电子分布特性 ,在此基础上采用热离子发射、热辅助遂穿模型对器件的暗电流特性进行了模拟 ,计算结果与器件实测的暗电流特性吻合得很好 ,说明热离子发射、热辅助遂穿机制是形成器件暗电流的主要构成机制 ,增加垒高、降低阱中掺杂浓度及降低工作温度是抑制器件暗电流的主要途径 ,计算结果对进一步优化器件的设计将起到重要的理论指导作用 .
A new type of quantum well infrared detector based on intercalation absorption between GaAs / AlGaAs system bands was calculated by Poisson’s equation and Schrodinger’s equation. The energy band structure and electron distribution of the new device structure were calculated. Based on this, Ion-emitter and thermal-assisted tunneling model were used to simulate the dark current characteristics of the device. The calculated results are in good agreement with the dark current measured by the device. It is concluded that the thermionic emission and thermal assisted tunneling are the main components of dark current Mechanism to increase the base height, reducing the doping concentration in the well and lowering the operating temperature are the main ways to suppress the dark current of the device. The calculation results will play an important theoretical guiding role in further optimizing the device design.