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利用选择外延技术研制了 1 5 μmDFB激光器和自对准模斑转换器单片集成器件 .激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料 ,同时可以降低选择性生长对接结构的难度 .所研制集成器件的阈值为 4 4mA ,在 49 5mA下的输出功率为 10 1mW ,边模抑制比为 33 2dB ,垂直方向和水平方向上的远场发散角分别为 9°和 15°,1dB偏调容差分别为 3 6 μm和 3 4μm .
The selective epitaxial technique was used to fabricate a monolithic integrated device of 15 μmDFB laser and self-aligned spot-on-speck converter.Moreover, the upper confinement layer of the laser and the wedge-shaped waveguide spot translator in the vertical direction are selectively grown at the same time. Respectively, to optimize the material of the active region and the spot-blot converter, and to reduce the difficulty of the selective growth of the docking structure. The threshold value of the integrated device is 44 mA, the output power is 10 1 mW at 49 5 mA, the side mode suppression ratio is 33 2 dB, the far-field divergence angles in the vertical and horizontal directions are 9 ° and 15 °, respectively, and the 1 dB offset tolerances are 36 μm and 34 μm, respectively.