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近年来,在同一衬底上单片集成光电子器件的研究相当活跃,现已报导的一些光电子集成电路(OEIC),大多采用液相外延(LPE)生长多层结构。日本富士通的T.Sanade等人报导了在MBE生长的SI—GaAs衬底上的AlGaAs/GaAs多量子阱(MQW)LD和GaAsMESFET的单片集成。由MQW激光器和两只MESFET组成的集成结构如图1所示。所有外延层均用MBE法在(100)SI—GaAs衬底上生长。MBE生长分别进行三次,即n~+-GaAs接触层,激光器结构和FET层。生长激光器结构时,衬底温度为710℃。沟槽腐蚀后,先在SI—GaAs衬底上生
In recent years, research on monolithically integrated optoelectronic devices on the same substrate has been quite active. Some of the optoelectronic integrated circuits (OEICs) that have been reported are mostly grown by liquid phase epitaxy (LPE). T.Sanade et al., Fujitsu, Japan, reported the monolithic integration of AlGaAs / GaAs multiple quantum well (MQW) LD and GaAsMESFETs on MBE grown SI-GaAs substrates. The integrated structure consisting of an MQW laser and two MESFETs is shown in Figure 1. All epitaxial layers were grown on (100) SI-GaAs substrates by the MBE method. MBE growth was performed three times, respectively, namely the n ~ + -GaAs contact layer, the laser structure and the FET layer. When growing the laser structure, the substrate temperature was 710 ° C. After the trench is etched, it is first born on the SI-GaAs substrate