【摘 要】
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Diodes公司(Diodes Incorporated)推出一对MOSFETH桥,DMHC4035LSD和DMHC3025LSD。产品通过减少元件数量及缩减50%的印刷电路板占位面积,简化电机驱动和电感无线充电电路。40V
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Diodes公司(Diodes Incorporated)推出一对MOSFETH桥,DMHC4035LSD和DMHC3025LSD。产品通过减少元件数量及缩减50%的印刷电路板占位面积,简化电机驱动和电感无线充电电路。40V额定值H桥DMHC4035LSD旨在满足车用电机驱动应用的要求30V额定值H桥DMHC3025LSD则适合12V单相风扇应用。DMHC3025LSD及DMHC4035LSD把双N通道和双P通道MOSFET集成到占位面积仅为5mm×6mm的单一SO-8封装,成为完整的H桥。替代尺寸相当于四个SOT23封装或两个SO-8封装的器件,适用于多种受空间限制的
Diodes Incorporated has introduced a pair of MOSFETH bridges, the DMHC4035LSD and the DMHC3025LSD. Products simplify motor drive and inductor wireless charging circuits by reducing component count and reducing board space by 50%. 40V Ratings The H-Bridge DMHC4035LSD is designed to meet the requirements of automotive motor drive applications. The 30-V rating H-Bridge DMHC3025LSD is suitable for 12V single-phase fan applications. The DMHC3025LSD and DMHC4035LSD integrate dual N and dual P-channel MOSFETs into a single SO-8 footprint occupying only 5 mm by 6 mm, making them a complete H-bridge. Replacement size equivalent to four SOT23 packages or two SO-8 package devices for a variety of space-constrained
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