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本文叙述了注硼基区、注砷发射区双极电路的研制结果。在与常规双极工艺相容的条件下,制作了双注入晶体管(f_T=0.88～1.1GHz)、双注入ECL双门(t_(pd)=3～5ns/门及双注入I~2L-15级闭环振荡器(t_(pd)=20ns/门)。本文还给出了注入能量、剂量及掩膜厚度,退火条件与器件参数之间的关系。
This article describes the boron-based base, Note arsenic emitter bipolar circuit development results. Double implanted transistors (f_T = 0.88 ~ 1.1GHz), double implanted ECL double gate (t_ (pd) = 3 ~ 5ns / gate and double implanted I ~ 2L-15 Stage closed-loop oscillator (t pd = 20 ns / gate) .This paper also gives the relationship between the implantation energy, dose and mask thickness, annealing conditions and device parameters.