论文部分内容阅读
利用热丝ＣＶＤ方法研究了横向偏压对金刚石薄膜成核和生长的影响．实验表明，随着偏流的增加，金刚石在光滑硅衬底上的成核密度得到显著提高，最高可达 １．１×１０８ｃｍ－２．，但是横向偏压不利于金刚石薄膜的生长．原位光发射谱研究发现，横向偏流的增加提高了原子氢和ＣＨ基团的浓度，导致衬底表面非晶碳层的形成，这可能是造成横向偏压促进金刚石成核却不利于金刚石薄膜生长的主要原因．
The effects of transverse bias on the nucleation and growth of diamond films were investigated by hot wire CVD. Experiments show that with the increase of bias current, the nucleation density of diamond on the smooth silicon substrate can be significantly increased up to 1.1 × 108cm-2. , But the lateral bias is not conducive to the growth of diamond films. In-situ optical emission spectra study found that the increase of lateral bias current increased the concentration of atomic hydrogen and CH groups, resulting in the formation of amorphous carbon layer on the substrate surface, which may be caused by lateral bias to promote diamond nucleation is not conducive to the diamond film The main reason for growth.