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微波砷化镓场效应晶体管(GaAs FET)的出现和应用可以说是七十年代固态微波的最辉煌成果.自1971年研制成GaAs FET以来,由于它在微波频段具有低噪声、高增益、低三阶交调失真、高反向隔离、低工作电压、高输入阻抗和热稳定性好等特点,因此已广泛用于通信、雷达、电子对抗等设备中.随着设计和工艺水平的不断突破,近年来GaAs FET的应用领域已迅速扩展到诸如低噪声UHF电子调谐器、卫星直播电视接收机前端、闯入报警器、多卜勒雷达、汽车电话及TV中继接收站等民用电器方面.一、GaA8 FET的分类和结构用于微波频段的GaAs FET,按栅的不同结构,可分为金属半导体接触栅场效应晶体管(MESFET)、PN结栅场效应晶体管(JFET)和绝缘栅场效应晶体管(IGFET或MOSFET)三类.其中以MESFET发展
The emergence and application of microwave GaAs field effect transistors (GaAs FETs) is arguably the most brilliant result of solid-state microwaves in the 1970s, since GaAs FETs were developed in 1971 due to their low noise, high gain and low in the microwave band Third-order intermodulation distortion, high reverse isolation, low operating voltage, high input impedance and good thermal stability, it has been widely used in communications, radar, electronic warfare equipment, etc. With the constant breakthrough in the level of design and technology In recent years, the field of GaAs FETs has rapidly expanded to civilian applications such as low noise UHF electronic tuners, satellite live television receiver front ends, breakout alarms, Doppler radar, car phones and TV relay reception stations. First, the classification and structure of GaA8 FET GaAs FET for the microwave band, according to the different structures of the gate can be divided into metal semiconductor field effect transistor (MESFET), PN junction gate field effect transistor (JFET) and insulation gate field effect Transistor (IGFET or MOSFET) three categories, which MESFET development