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氧化锌(ZnO)是一种极其重要的半导体材料,具有宽带隙(3.37eV)和高激子结合能(60meV),适合制作短波长发光二极管和激光二极管。综述了体块ZnO单晶的主要生长方法:化学气相输运法、水热法、助溶剂法的原理和优缺点;着重探讨了水热法和助溶剂法的生长参数及所生长ZnO单晶的特征;结合KOH+H2O体系,论述了助熔剂法的反应机理。介绍了体块ZnO单晶中存在的缺陷及其对ZnO性质的影响。
Zinc oxide (ZnO) is an extremely important semiconductor material with wide bandgap (3.37eV) and high exciton binding energy (60meV), making it suitable for short-wavelength light-emitting diodes and laser diodes. The main growth methods of bulk ZnO single crystal were reviewed: the principles and advantages and disadvantages of chemical vapor transport, hydrothermal and cosolvent methods; the growth parameters of hydrothermal and cosolvent methods and the growth of ZnO single crystal The reaction mechanism of flux method is discussed in combination with KOH + H2O system. The defects existing in the bulk ZnO single crystal and its influence on the properties of ZnO were introduced.