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利用等离子体氧化方法在单晶硅片上制备了厚度小于 10 nm的超薄 Si O2 层 .通过傅里叶红外光谱 (FTIR)、X射线光电子谱 (XPS)、透射电子显微镜 (TEM)、椭圆偏振法和电流电压 (I- V)、电容电压 (C- V)测量对生成的超薄氧化层性质进行研究
An ultrathin Si O2 layer with a thickness of less than 10 nm was prepared on a monocrystalline silicon wafer by plasma oxidation. The structure of the as-deposited Si O2 layer was characterized by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) Polarization method and the current voltage (I-V), capacitance voltage (C-V) measurement of the properties of the resulting ultra-thin oxide