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本文提出了一种在光照和短路条件下测量Ni/α-Si∶H肖特基结势垒宽度的方法。同时,又在实验确定的参数的基础上,从理论上计算了在AM1太阳光谱照射下Ni/α-Si∶H太阳电池的I-V曲线。由此得到的非晶硅少子扩散长度的数值与作者1983年用表面光电压法(SPV)测得的是一致的。从计算结果出发,着重分析了影响填充因子的各种因素。与实验对比可以得出结论:被测太阳电池的填充因子小是串、并联电阻造成的,而不是扩散长度太短的缘故。
This paper presents a method for measuring the width of the barrier to Ni / α-Si: H Schottky junction under both light and short-circuit conditions. At the same time, based on the experimentally determined parameters, the I-V curves of Ni / α-Si: H solar cells under AM1 solar spectrum were calculated theoretically. The numerical value of the diffusion length of the amorphous silicon thus obtained is in agreement with the author’s 1983 surface photovoltage method (SPV). Starting from the calculation results, we focus on the various factors that affect the fill factor. It can be concluded from the experiment that the fill factor of the solar cell to be measured is small, which is caused by the parallel resistance instead of the diffusion length being too short.