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在制备出光致发光能量为２．７ｅＶ的发射蓝光多孔硅的基础上对它进行了较系统的研究：测量了它的光致发光时间分辨光谱，用傅里叶交换红外光谱分析了其表面吸附原子的局域振动模，研究了Ｙ射线辐照对其发光的影响，并与发红、黄光的多孔硅作了对比，通过空气中长期存放、激光和紫外线照射的方法，研究了光致发光峰能量为２．７ｅＶ的多孔硅发光稳定性．我们及其它文献中报道的多孔硅蓝光发射的实验结果与量子限制模型矛盾，但能用量子限制／发光中心模型解释．我们认为多孔硅的２．７ｅＶ发光是多孔硅中包裹纳米硅的ＳｉＯ＿ｘ层中某种特征发光中心引起的．
Based on the preparation of blue-emitting porous silicon with a photoluminescence energy of 2.7eV, the photoluminescence time-resolved spectroscopy was measured and its surface adsorption was analyzed by Fourier transform infrared spectroscopy Atomic vibration mode was studied. The effect of Y-ray irradiation on its luminescence was studied and compared with the red-emitting and yellow-light porous silicon. By means of long-term storage in air, laser and UV irradiation, Porous silicon luminescent stability with a luminescence peak energy of 2.7 eV. The experimental results of porous silicon blue light emission reported in us and elsewhere contradicted the quantum confinement model but could be explained by the quantum confinement / luminescence center model. We think that the 2.7eV luminescence of porous silicon is caused by a certain characteristic luminescence center in the SiOx layer of nanosilver that is surrounded by porous silicon.