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本文研究了在超高真空低温ＣＶＤ（ＣｈｅｍｉｃａｌＶａｐｏｒＤｅｐｏｓｉｔｉｏｎ）硅外延中，ＥＣＲ（ＥｌｅｃｔｒｏｎＣｙｃｌｏｔｒｏｎＲｅｓｏｎａｎｃｅ）微波等离子原位溅射清洗对外延层界面损伤的情况，实验表明，界面处引进的损伤是较严重的，它与衬底偏压的高低和溅射时间的长短直接相关。
In this paper, we investigate the damage of the interface of the epitaxial layer by in-situ sputter cleaning with ECR (Electron Cyclotron Resonance) in ultra-high vacuum CVD (Chemical Vapor Deposition) silicon epitaxy. The experimental results show that the damage introduced at the interface is more serious, The substrate bias is directly related to the sputtering time.