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论述了天光一号电子束泵浦 Kr F准分子激光预放大器电子束产生和传输系统的研制。针对低电压 ( 40 0 k V)和高电流密度 ( 1 4 3 Acm-2 ) ,重点考虑了二极管真空绝缘界面、电极结构、漂移区长度和主膜支撑等问题并介绍了实验结果 :二极管电压在 4 50 k V以上仍能稳定工作 ,电流上升前沿约2 0 ns,电子束总束能 4 .2 k J以上。只要开关导通时间选在 PFL电压峰值附近 ,Marx建立时间抖动小于2 0 ns,对总束能的影响将小于 5%。
The development of the electron beam generation and transmission system of the Krumtar excimer laser pre-amplifier of the electron beam-pumped KrF excimer laser was discussed. For low voltage (40 0 kV) and high current density (143Am-2), the issues of diode vacuum insulation interface, electrode structure, drift region length and main film support are emphatically considered. The experimental results are also presented. The diode voltage Stable above 4 50 kV, the current rise is about 20 ns ahead and the total beam energy is over 4.2 kJ. As long as the switch on-time is chosen to be around the PFL voltage peak, Marx’s settling time jitter is less than 20 ns and the effect on the total beam energy will be less than 5%.