As technology node shrinks, aggressive design rules for contact and other back end of line(BEOL)layers continue to drive the need for more effective full chip patterning optimization. Resist top loss is one of the major challenges for 28 nm and below technology nodes, which can lead to post-etch hotspots that are difficult to predict and eventually degrade the process window significantly. To tackle this problem, we used an advanced programmable illuminator(FlexRay) and Tachyon SMO(Source Mask Optimization) platform to make resistaware source optimization possible, and it is proved to greatly improve the imaging contrast, enhance focus and exposure latitude, and minimize resist top loss thus improving the yield. As technology node shrinks, aggressive design rules for contact and other back end of line (BEOL) layers continue to drive the need for more effective full chip patterning optimization. Resist top loss is one of the major challenges for 28 nm and below technology nodes, which can lead to post-etch hotspots that are difficult to predict and eventually degrade the process window significantly. To tackle this problem, we used an advanced programmable illuminator (FlexRay) and Tachyon SMO (Source Mask Optimization) platform to make resistaware source optimization possible , and it is proved to greatly improve the imaging contrast, enhance focus and exposure latitude, and minimize resist top loss thus improving the yield.