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高电子迁移率晶体管(HEMT)在近十年的发展中,已成为微波、毫米波及高速数字领域中最重要的新型半导体器件之一,并正进入实用化与商品化.HEMI的许多优异性能与器件内部异质结界面附近的二维电子气(2DEG)的性质(如高漂移速度、高电子浓度)有关,因而随着对新的异质结构材料中2DEG特性研究的深入,采用新的材料研制HEMT,已成为器件发展中的一个最重要的方向.
HEMT has become one of the most important new semiconductor devices in the fields of microwave, millimeter wave and high-speed digital and has been put into practical use and commercialization in the recent ten years. Many excellent features of HEMI With the 2DEG (2DEG) properties (such as high drift velocity and high electron concentration) in the vicinity of the heterojunction interface of the device, the new material The development of HEMT has become one of the most important directions in the development of devices.