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采用霍尔测量、沟道卢瑟福背散射（ 沟道 Ｒ Ｂ Ｓ） 以及低温光荧光方法对中子辐照 Ｇａ Ａｓ 缺陷的快速退火行为进行了研究。嬗变杂质锗未能全部激活的原因之一是部分锗原子占据砷位形成受主。在快速退火过程中可形成反位缺陷 Ｇａ Ａｓ（ Ｅｖ ＋ ２００ ｍｅ Ｖ） 以及复合缺陷 Ｉ Ｇａ － Ｖ Ａｓ 。
The rapid annealing behavior of GaAs defects irradiated by neutron was investigated by Hall measurement, channel Rutherford backscattering (channel R B S) and low temperature photofluorescence. One of the reasons for the incomplete activation of dopant germanium is that some germanium atoms occupy the arsenic sites to form acceptors. In the rapid annealing process can be formed anti-AlGaAs (Ev +200 meV) and composite defects I Ga - V As.