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采用ＳＩＭＯＸ和ＢＥＳＯＩ材料制作了ＣＭＯＳ倒相器电路，在２５～２００℃的不同温度下测量了ＰＭＯＳ和ＮＭＯＳ的亚阈特性曲线。实验结果显示，薄膜全耗ＳＩＭＯＸ器件的阈值电压和泄漏电流随温度的变化小于厚膜ＢＥＳＯＩ器件。
CMOS inverter circuit was fabricated by using SIMOX and BESOI materials. The subthreshold characteristics of PMOS and NMOS were measured at different temperatures of 25 ~ 200 ℃. The experimental results show that the threshold voltage and leakage current of thin film full-loss SIMOX device are less than that of the thick-film BESOI device.