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基于磷蒸气注入原位合成技术及液封直拉磷化铟(InP)单晶的原理,设计了CZ-50型InP单晶炉。介绍了该单晶炉的主体结构,特别是原位合成装置的结构。该装置不仅可以实现磷蒸气注入法原位合成InP多晶材料,并且根据InP材料合成及单晶生长的特殊性,对该装置进行了结构创新设计:在炉盖上设计并安装了一套可升降的热偶测温装置,实现了在生产过程中,对坩埚内熔体温度进行在线测量;通过在炉体内部加设观察窗遮挡装置及对观察窗进行加热的方法,解决了长期以来InP材料合成及单晶生长过程中由于磷的挥发特性所导致的观察窗污染问题。
Based on the principle of phosphorus vapor in situ synthesis and the principle of liquid crystal pulling indium phosphide (InP) single crystal, a CZ-50 InP single crystal furnace was designed. The main structure of the single crystal furnace, especially the structure of the in-situ synthesis device, is introduced. The device can not only realize in-situ synthesis of InP polycrystalline material by the phosphorus vapor injection method, but also has an innovative structural design according to the particularity of InP material synthesis and single crystal growth: a set of design and installation Lifting thermocouple temperature measuring device to realize in-process measurement of the melt temperature in the crucible on-line measurement; by adding a viewfinder window shelter in the furnace body and the observation window heating method to solve the long-term InP Material synthesis and single crystal growth process due to the volatilization of phosphorus caused by the observation window pollution problems.