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应用Van der pauw法测试了扩硼多晶硅层的电阻率、载流子浓度和霍尔迁移率,对多晶硅层的厚度、淀积、温度以及硼扩散的温度和时间对这些电学特性的影响进行了研究。发现合乎硅栅MOS器件要求的硼扩散条件是950℃半小时。在此条件下测得电阻率是1.2×10~(-3)Ωcm。当多晶硅层的厚度和淀积温度增加时,由于颗粒变大,霍尔迁移率也随着增大,在本实验范围内,测得霍尔迁移率的最大值是30厘米~2/伏·秒。对硼扩散与载流子浓度的关系用多晶硅——氧化物——单晶硅结构的简化模型进行了分析。发现载流子浓度是随着一个无量纲的变量1/L_P(=D_P~t/l_y~2)的增加而增加,并且由于硼在晶粒间界的沉淀而出现饱和,饱和时的载流子浓度大约是硼在单晶硅衬底中最大固溶度的百分之四十。
The Van der pauw method was used to test the resistivity, carrier concentration and Hall mobility of the boron-doped polysilicon layer. The effects of the polysilicon layer thickness, deposition, temperature and temperature and time of boron diffusion on these electrical properties were investigated the study. The boron diffusion condition found to be in line with the silicon gate MOS device requirement is 950 ° C for half an hour. The resistivity measured in this condition is 1.2 × 10 -3 Ωcm. As the thickness and deposition temperature of the polycrystalline silicon layer increase, the Hall mobility increases as the particles become larger. The maximum value of the Hall mobility measured in this experiment is 30 cm 2 / V · second. The relationship between boron diffusion and carrier concentration was analyzed using a simplified model of polysilicon-oxide-monocrystalline silicon structure. It is found that the carrier concentration increases with the increase of a dimensionless variable 1 / L_P (= D_P ~ t / l_y ~ 2) and due to the precipitation of boron in the grain boundaries, the current flow at saturation The sub-concentration is about forty percent of the maximum solubility of boron in the monocrystalline silicon substrate.