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用脉冲激光沉积(PLD)法在不同温度的Si(111)衬底上成功制备了c轴择优取向的Mg0·05Zn0·95O薄膜.通过X射线衍射(XRD)和光致发光谱(PL)研究了衬底温度对Mg0·05Zn0·95O薄膜结构和发光特性的影响,探讨了薄膜的结晶质量与发光特性之间的关系.结果表明,在衬底温度为450℃时生长的Mg0·05Zn0·95O薄膜具有很好的c轴取向和较强的光致发光峰.室温下分别用激发波长为240,300和325nm的氙灯作为激发光源得到不同样品的PL谱,分析表明紫外发光峰和紫峰来源于自由激子的复合辐射且发光强度与薄膜的结晶质量密切相关,蓝绿发光峰与氧空位有关.此外,探讨了衬底温度影响紫外光致发光峰红移和蓝移的可能机理.
The c-axis preferred orientation Mg0.05Zn0.95O thin films were successfully deposited on Si (111) substrates at different temperatures by pulsed laser deposition (PLD) method.The structures of the films were characterized by X-ray diffraction (XRD) and photoluminescence (PL) The effect of substrate temperature on the structure and luminescent properties of Mg0.05Zn0.95O thin films was investigated.The relationship between the crystalline quality and the luminescent properties of the films was discussed.The results show that the Mg0.05Zn0.95O thin films grown at a substrate temperature of 450 ℃ With good c-axis orientation and strong photoluminescence peaks.The PL spectra of different samples were obtained by using xenon lamp with excitation wavelength of 240, 300 and 325 nm as the excitation light source at room temperature respectively. The results showed that the UV and UV peaks originated from free excitons And the luminescence intensity is closely related to the crystalline quality of the film, and the blue-green luminescence peak is related to the oxygen vacancies.In addition, the possible mechanism of substrate temperature affecting the red-shift and blue-shift of the ultraviolet light-emitting peak is discussed.