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在整个硅烷分解化学淀积硅膜的试验温度范围内,都显示出滞流层效应。对数生长速率与温度倒数的曲线分为三段直线。高温区的速率控制机制是硅烷分解后的硅原子;而不是硅烷通过滞流层的扩散机制控制了生长速率。中低温区的速率控制机制是硅烷分解,而不是表面反应过程控制生长速率。速率控制机制的不同,生长速率与滞流层高度的依赖关系就不同:在中低温区生长速率与滞流层高度成正比;在高温区生长速率与滞流层高度的平方成反比。
The effect of the stagnant layer was demonstrated over the entire experimental temperature range for silane decomposition of chemically deposited silicon films. Logarithm of growth rate and temperature reciprocal curve is divided into three straight lines. Instead of silane controlling the growth rate through the diffusion mechanism of the stagnant layer, the rate-controlling mechanism in the high temperature zone is silicon atoms after silane decomposition. The rate-controlling mechanism in the mid-low temperature zone is the silane decomposition rather than the surface reaction process controlling the growth rate. The dependence of growth rate on the height of the stratosphere is different depending on the rate control mechanism. The growth rate is directly proportional to the height of the stratosphere in the middle and low temperature regions. The growth rate is inversely proportional to the height of the stratosphere in the high temperature region.