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采用脉冲激光沉积技术在SnO2:F(FTO)衬底上制备了La0.67Sr0.33MnO3(LSMO)薄膜。室温下利用直流电压对Au/LSMO/FTO三明治结构的器件进行了电化学测试。结果显示样品具有明显的双极性电阻开关性能。通过对I-V特性曲线进行分析,认为在高阻态时肖特基势垒和空间电荷限制电流输运机制调控。在高场区,电阻开关的高低阻态现象由电子陷阱中心分布的不对称引起的空间电荷限制电流理论来解释。
La0.67Sr0.33MnO3 (LSMO) thin films were deposited on SnO2: F (FTO) substrates by pulsed laser deposition. The device of Au / LSMO / FTO sandwich was electrochemically tested with DC voltage at room temperature. The results show that the sample has significant bipolar resistance switching performance. By analyzing the I-V characteristic curve, it is considered that the Schottky barrier and the space charge-limited current transport mechanism are controlled in the high-resistance state. In the high field, the high and low resistance states of the resistance switch are explained by the space charge limiting current theory caused by the asymmetry of the distribution of the electron traps.