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法国研究者近日称在III-氮化物半导体结构中实现了二维电子气的最佳性能。来自电子、微电子和纳米技术研究院(IEMN)和Thales Research and Technology的研究团队认为基于更高功率密度、更高热导性能、一定频率范围内效率不断提升且宽带条件下保持高性能运行这些发展趋势,在远程通信、健康医疗、太空探索和军用领域30GHz+应用具有巨大的应用潜力。在高电子迁移率晶体管以及其他器件中,二维电子气可充当导电沟道,一般在氮化镓和势垒结构的交界面处形成。一般情况下,势垒由更宽带隙的材料
French researchers recently said that in the III-nitride semiconductor structure to achieve the best performance of two-dimensional electron gas. Research teams from the IEMN and Thales Research and Technology believe these developments are based on higher power densities, higher thermal conductivity, increased efficiency over a range of frequencies, and high performance over broadband Trend, 30GHz + applications in telecommunications, health care, space exploration and military applications have tremendous potential for applications. In high electron mobility transistors and other devices, two-dimensional electron gas can act as a conductive channel, typically at the interface of the gallium nitride and barrier structures. In general, the barrier is made of a wider bandgap material