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通过原位磷注入液封直拉(LEC)法在富铟熔体中生长了<100>方向的磷化铟单晶,并研究了晶体内缺陷形态及形成机制。在富铟熔体中生长的磷化铟晶锭中发现,多种形态富铟夹杂物镶嵌在磷化铟基体中。在晶片的抛光过程中,由于局部受力不均匀导致富铟夹杂周围的晶体出现裂纹。通过研究发现,除了磷化铟晶体的各向异性外,局部的冷却条件也控制着晶体凝固过程,进而控制着富铟夹杂物的形态。由于磷化铟基体与富铟夹杂物的热膨胀系数不同,在富铟多面体夹杂物产生了很大的应力,进而导致富铟夹杂物附近出现了位错聚集现象。经讨论给出了这些夹杂物的形成机制及其对晶体质量的影响。
In situ indium phosphide (ITO) single crystal grown in the <100> indium-rich melt by liquid-in-situ directinjection (LEC) was studied. The defect morphology and formation mechanism were also studied. Indium indium ingot ingot grown in indium-rich melt has been found in various indium-rich inclusions in indium phosphide matrix. In the process of wafer polishing, the crystals around the indium-rich inclusions are cracked due to the uneven local stress. It has been found through research that in addition to the anisotropy of indium phosphide crystals, the local cooling conditions also control the crystal solidification process and thus the morphology of the indium-rich inclusions. Due to the different coefficients of thermal expansion between the indium phosphide substrate and the indium-rich inclusions, great stress is generated in the indium-rich polyhedron inclusions, which leads to dislocation aggregation near the indium-rich inclusions. The formation mechanisms of these inclusions and their effects on the crystal quality are discussed.