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首次在国内提出了一种双层膜结构相对测量法。用该方法测量了 CMOS器件 X射线的相对剂量增强因子 RDEF(Relative Dose Enhancement Factor)。同时用 Monte- Carlo粒子输运方法计算了实验条件下 Al/ Au/ Si、Au/ Al/ Si结构界面过渡区剂量分布 ,理论模拟与实验验证 ,符合较好。
For the first time in the country proposed a double membrane structure relative measurement method. The relative dose enhancement factor RDEF (Relative Dose Enhancement Factor) of the X-ray of CMOS device was measured by this method. At the same time, Monte-Carlo particle transport method was used to calculate the dose distribution in the interface transition region of Al / Au / Si and Au / Al / Si structure under the experimental conditions. The theoretical simulation and experimental verification are in good agreement.