论文部分内容阅读
以自组装聚苯乙烯小球(PS)单层膜为掩膜,利用Au对Si表面的催化氧化作用以及KOH溶液对单晶Si的各向异性腐蚀特性,在Si(100)面上制备了一系列尺寸小于100 nm有序可控的Si纳米孔阵列.扫描电镜(SEM)和原子力显微镜(AFM)等的测试结果显示:当PS小球溶液与甲醇溶液的体积比为9:11时,可形成大面积无缺陷的单层膜;但当体积比过大时,会导致类似双层膜结构的形成;而当体积比过小时,会诱导形成点缺陷和线缺陷.对PS小球及溅射Au处理过的Si晶片进行KOH溶液腐蚀,随着腐蚀时间变长,纳米孔的横向尺寸和深度增大,其形貌由圆形逐渐变为倒金字塔型,当腐蚀时间超过10 min,纳米孔阵列的有序性遭到破坏.采用离子束溅射技术在倒金字塔型纳米孔衬底上获得了有序Ge/Si纳米岛,而在圆形纳米孔衬底上获得了有序Ge/Si纳米环.进一步对有序Ge/Si纳米岛及纳米环的形成机理进行了解释.
A self-assembled monolayer polystyrene (PS) film was used as a mask to prepare the Si (100) surface by the catalytic oxidation of Au onto the Si surface and the anisotropic corrosion of single crystal Si by KOH solution A series of Si nanopore arrays with orderly controllable size less than 100 nm were obtained.The results of SEM and AFM showed that when the volume ratio of PS pellet to methanol was 9:11, Can form a large area defect-free single-layer film; but when the volume ratio is too large, it will lead to the formation of similar double-layer film structure; and when the volume ratio is too small, it will induce the formation of point defects and line defects. The sputtered Au wafers were corroded by KOH solution. As the etching time was longer, the lateral size and depth of the nanopores increased, and the morphologies changed from circular to inverted pyramids. When the etching time exceeded 10 min, The orderedness of the nanopore arrays is destroyed.The ordered Ge / Si nano-islands are obtained on the inverted pyramid-type nanoporous substrate by ion beam sputtering, and the ordered Ge / Si nanorings. The formation mechanism of ordered Ge / Si nano-islands and nanorings is further explained.