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以E.Sano的金属-半导体-金属光电探测器(MSM-PD)模型为基础,提出了一种改进型的模型.该模型以多个电流源和电容并联的形式构造,以吸收区过剩电子和空穴总数为研究对象,求解速率方程.另外计算了电容,给出了暗电流与端电压的非线性计算式,改进了传统模型中暗电流的线性计算方法.通过线性叠加给出了该模型光电流的数学解析解.通过在Matlab中的模拟计算,表明该模型具有计算量小、准确度高的特点,它不仅能反映一定偏压和光照下光电流的变化,而且能展示光电子在器件中的转化过程.这种模型也能较好地应用于微弱信号的检测模拟.
Based on the E.Sano metal-semiconductor-metal photodetector (MSM-PD) model, an improved model is proposed, which is constructed by connecting multiple current sources and capacitors in parallel to absorb excess electrons And the total number of holes as the object of study to solve the rate equation. In addition, the capacitance is calculated and the non-linear equations for the dark current and the terminal voltage are given to improve the linear calculation method of the dark current in the traditional model. The mathematical solution of the model photocurrent is given.The numerical simulation in Matlab shows that the model has the characteristics of low computational complexity and high accuracy. It can not only reflect the change of photocurrent under certain bias voltage and illumination, Device in the conversion process.This model can also be better applied to weak signal detection simulation.