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研究了界面态对4H-SiCMESFET的肖特基栅接触的影响.栅接触工艺主要采用Ti/Pt/Au蒸发,经过剥离后形成.基于热电子理论提出了一种参数提取方法,得到界面态密度和界面电容分别为4.386×1013cm-2.eV-1和6.394×10-6F/cm2,这与测量得到的器件端特性一致.
The influence of interface states on the Schottky gate contact of 4H-SiCMESFET was studied.The gate contact process was mainly performed by Ti / Pt / Au evaporation, and then was formed by exfoliation.A parameter extraction method based on the theory of hot electrons was proposed, and the interface state density And interfacial capacitances were 4.386 × 1013cm-2.eV-1 and 6.394 × 10-6F / cm2, respectively, in agreement with the measured device end characteristics.